Atomic-layer triangular WSe2 sheets: synthesis and layer-dependent photoluminescence property

The exotic band structures and distinctive physical properties of two-dimensional materials have exhibited great potential for fundamental research and technical applications in spintronics, electronics, photonics, optoelectronics, and so forth. Facing the challenge of effective synthesis of WSe2 two-dimensional sheets, for the first time we demonstrate a straightforward catalyst-free vapor-solid (VS) growth method to synthesize ultrathin, even monolayer, WSe2 sheets with high yield, regular shapes and high quality optical properties on sapphire substrates. By detailed layer-number-dependent photoluminescence measurements at a low temperature of 40 K, we find the spin-orbit splitting at the K point of the WSe2 valence band with a fixed energy difference of 0.36 eV independent of layer number and the transition of indirect-to-direct gap when the thickness decreases to monolayer. These results, comparable to those of mechanically peeled WSe2 sheets, further prove the high optical and crystal quality of our WSe2 nanosheets via the VS growth approach. Our efforts may open up new exciting opportunities in future valley-based electronics, optoelectronics and photonics.

[1]  Xiaojie Xu,et al.  Heteroepitaxial growth of GaP/ZnS nanocable with superior optoelectronic response. , 2013, Nano letters.

[2]  B. Liu,et al.  GaS and GaSe Ultrathin Layer Transistors , 2012, Advanced materials.

[3]  Ting Zhang,et al.  Single-layer single-crystalline SnSe nanosheets. , 2013, Journal of the American Chemical Society.

[4]  Jing Kong,et al.  van der Waals epitaxy of MoS₂ layers using graphene as growth templates. , 2012, Nano letters.

[5]  Lain‐Jong Li,et al.  Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition , 2012, Advanced materials.

[6]  A. Ferrari,et al.  Graphene Photonics and Optoelectroncs , 2010, CLEO 2012.

[7]  J. Knights,et al.  Transmission spectra of some transition metal dichalcogenides. II. Group VIA: trigonal prismatic coordination , 1972 .

[8]  Ruitao Lv,et al.  Extraordinary room-temperature photoluminescence in triangular WS2 monolayers. , 2012, Nano letters.

[9]  Wei Liu,et al.  Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. , 2013, Nano letters.

[10]  Kai Xiao,et al.  Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates. , 2013, Nano letters.

[11]  Fengnian Xia,et al.  Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. , 2010, Nano letters.

[12]  P. Asbeck,et al.  Graphene: Status and prospects as a microwave material , 2011, WAMICON 2011 Conference Proceedings.

[13]  C. Dimitrakopoulos,et al.  100 GHz Transistors from Wafer Scale Epitaxial Graphene , 2010, 1002.3845.

[14]  Soon Cheol Hong,et al.  Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H- M X 2 semiconductors ( M = Mo, W; X = S, Se, Te) , 2012 .

[15]  F. Beltram,et al.  The optical visibility of graphene: interference colors of ultrathin graphite on SiO(2). , 2007, Nano letters.

[16]  Wenhui Dang,et al.  Few-layer nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with highly tunable chemical potential. , 2010, Nano letters.

[17]  Kang L. Wang,et al.  High-speed graphene transistors with a self-aligned nanowire gate , 2010, Nature.

[18]  K. Novoselov,et al.  Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane , 2008, Science.

[19]  Jing Kong,et al.  Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. , 2012, Nano letters.

[20]  L. Chu,et al.  Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. , 2012, ACS nano.

[21]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[22]  R. Ma,et al.  Nanosheets of Oxides and Hydroxides: Ultimate 2D Charge‐Bearing Functional Crystallites , 2010, Advanced materials.

[23]  M. I. Katsnelson,et al.  Chaotic Dirac Billiard in Graphene Quantum Dots , 2007, Science.

[24]  Xiaodong Xu,et al.  Vapor-solid growth of high optical quality MoS₂ monolayers with near-unity valley polarization. , 2013, ACS nano.

[25]  Qing Hua Wang,et al.  Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. , 2012, Nature nanotechnology.

[26]  Hui Li,et al.  Epitaxial heterostructures of ultrathin topological insulator nanoplate and graphene. , 2010, Nano letters.

[27]  Electric-field screening in atomically thin layers of MoS₂: the role of interlayer coupling. , 2012, Advanced materials.

[28]  Desheng Kong,et al.  Synthesis of MoS2 and MoSe2 films with vertically aligned layers. , 2013, Nano letters.

[29]  Dirac cones reshaped by interaction effects in suspended graphene (vol 7, pg 701, 2011) , 2012 .

[30]  Zhenxing Wang,et al.  ZnO/ZnSxSe1−x/ZnSe double-shelled coaxial heterostructure: Enhanced photoelectrochemical performance and its optical properties study , 2012 .

[31]  Wang Yao,et al.  Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides , 2012, Scientific Reports.

[32]  A. Ramasubramaniam Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides , 2012 .

[33]  Jonathan N. Coleman,et al.  Two‐Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials. , 2011 .

[34]  A. Javey,et al.  High-performance single layered WSe₂ p-FETs with chemically doped contacts. , 2012, Nano letters.

[35]  E. Tutuc,et al.  Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers , 2012 .

[36]  S. V. Morozov,et al.  Dirac cones reshaped by interaction effects in suspended graphene , 2011 .

[37]  Mustafa Lotya,et al.  Solvent Exfoliation of Transition Metal Dichalcogenides: Dispersability of Exfoliated Nanosheets Varies Only Weakly between Compounds /v Sol (mol/ml) Characterisation of Dispersions , 2022 .

[38]  Muhammad Safdar,et al.  High-performance UV-visible-NIR broad spectral photodetectors based on one-dimensional In₂Te₃ nanostructures. , 2012, Nano letters.

[39]  Feng Ding,et al.  Mechanical exfoliation and characterization of single- and few-layer nanosheets of WSe₂ , TaS₂ , and TaSe₂. , 2013, Small.

[40]  F. Xia,et al.  High-frequency, scaled graphene transistors on diamond-like carbon , 2011, Nature.

[41]  R. B. Murray,et al.  The band structures of some transition metal dichalcogenides. III. Group VIA: trigonal prism materials , 1972 .