Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation

The short-ranged bonding structure of organosilicate glasses can vary to a great extent and is directly linked to the mechanical properties of the thin film material. The combined action of ultraviolet (UV) radiation and thermal activation is shown to generate a pronounced rearrangement in the bonding structure of thin organosilicate glass films involving no significant compositional change or film densification. Nuclear magnetic resonance spectroscopy indicates loss of –OH groups and an increase of the degree of cross-linking of the organosilicate matrix for UV-treated films. Fourier transform infrared spectroscopy shows a pronounced enhancement of the Si–O–Si network bond structure, indicating the formation of more energetically stable silica bonds. Investigation with x-ray reflectivity and ellipsometric porosimetry indicated only minor film densification. As a consequence, the mechanical properties of microporous organosilicate dielectric films are substantially enhanced while preserving the organosili...

[1]  A. Borghesi,et al.  A comparative evaluation of spin-on-glass cure by FTIR technique , 1991 .

[2]  Michael Lane,et al.  Adhesion and debonding of multi-layer thin film structures , 1998 .

[3]  K. Minegishi,et al.  The Effect of Plasma Cure Temperature on Spin‐On Glass , 1993 .

[4]  F. Iacopi,et al.  Challenges for structural stability of ultra-low- k -based interconnects , 2004 .

[5]  A. Grill,et al.  Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization , 2003 .

[6]  Linards Skuja,et al.  F-doped and H2-impregnated synthetic SiO2 glasses for 157 nm optics , 1999 .

[7]  K. Gleason,et al.  Effects of condensation reactions on the structural, mechanical, and electrical properties of plasma-deposited organosilicon thin films from octamethylcyclotetrasiloxane , 2005 .

[8]  M. Loboda,et al.  Properties of a ‐ SiO x : H Thin Films Deposited from Hydrogen Silsesquioxane Resins , 1998 .

[9]  Florence Babonneau,et al.  Synthesis of Polycarbosilane/Siloxane Hybrid Polymers and Their Pyrolytic Conversion to Silicon Oxycarbide Ceramics , 1997 .

[10]  F. Iacopi,et al.  On factors affecting the extraction of elastic modulus by nanoindentation of organic polymer films , 2004 .

[11]  Karen Maex,et al.  Factors affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) thin films , 2002 .

[12]  K. Awazu,et al.  Strained Si–O–Si bonds in amorphous SiO2 materials: A family member of active centers in radio, photo, and chemical responses , 2003 .

[13]  J. Rogers,et al.  Optical Generation and Characterization of Acoustic Waves in Thin Films: Fundamentals and Applications , 2000 .

[14]  George M. Pharr,et al.  Substrate effects on nanoindentation mechanical property measurement of soft films on hard substrates , 1999 .

[15]  K. Gleason,et al.  Chemical bonding structure of low dielectric constant Si:O:C:H films characterized by solid-state NMR , 2005 .

[16]  Michael Thorpe,et al.  Continuous deformations in random networks , 1983 .

[17]  M. Albrecht,et al.  Materials issues with thin film hydrogen silsesquioxane low K dielectrics , 1998 .

[18]  M. Lane,et al.  Environmental effects on cracking and delamination of dielectric films , 2004, IEEE Transactions on Device and Materials Reliability.

[19]  M. Brook Silicon in Organic, Organometallic, and Polymer Chemistry , 1999 .

[20]  E. Sleeckx,et al.  Properties of porous HSQ-based films capped by plasma enhanced chemical vapor deposition dielectric layers , 2002 .

[21]  S. Grigull,et al.  In situ ERDA studies of ion drift processes during anodic bonding of alkali-borosilicate glass to metal , 1998 .

[22]  Karen Maex,et al.  Low dielectric constant materials for microelectronics , 2003 .

[23]  Hideo Okabe,et al.  Photochemistry of small molecules , 1978 .