Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS2 Field‐Effect Transistors
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[1] Kenji Watanabe,et al. Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes , 2019, Applied Physics Express.
[2] N. Fang,et al. Direct observation of electron capture and emission processes by the time domain charge pumping measurement of MoS2 FET , 2018, Applied Physics Letters.
[3] N. Fang,et al. Accumulation-Mode Two-Dimensional Field-Effect Transistor: Operation Mechanism and Thickness Scaling Rule. , 2018, ACS applied materials & interfaces.
[4] Yu Huang,et al. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions , 2018, Nature.
[5] C. Cheng,et al. Two-dimensional electronic transport and surface electron accumulation in MoS2 , 2018, Nature Communications.
[6] P. Hurley,et al. Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis , 2018 .
[7] W. Yu,et al. Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors , 2018 .
[8] A. Morpurgo,et al. Hole Transport in Exfoliated Monolayer MoS2. , 2018, ACS nano.
[9] N. Fang,et al. Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor , 2018, 1801.10345.
[10] Michael Neumann,et al. Probing defect dynamics in monolayer MoS2 via noise nanospectroscopy , 2017, Nature Communications.
[11] K. Nagashio,et al. Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition. , 2017, Nanoscale.
[12] J. Baldwin,et al. Electronic Transport in Bilayer MoS2 Encapsulated in HfO2. , 2017, ACS applied materials & interfaces.
[13] P. Hurley,et al. Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy. , 2017, ACS applied materials & interfaces.
[14] D. Chi,et al. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric , 2017, Scientific Reports.
[15] N. Fang,et al. Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics , 2016, 1612.07556.
[16] Chong-Yun Park,et al. Indirect Bandgap Puddles in Monolayer MoS2 by Substrate‐Induced Local Strain , 2016, Advanced materials.
[17] K. Nagashio,et al. Buffer layer engineering on graphene via various oxidation methods for atomic layer deposition , 2016, 1610.09857.
[18] Moon J. Kim,et al. MoS2 transistors with 1-nanometer gate lengths , 2016, Science.
[19] J. Tominaga,et al. Two-Dimensional Transition-Metal Dichalcogenides , 2016 .
[20] L. Tapasztó,et al. The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy , 2016, Scientific Reports.
[21] T. Grasser,et al. The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors , 2016 .
[22] J. Appenzeller,et al. Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model , 2015, Nature Communications.
[23] Woong Choi,et al. Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals. , 2016, ACS applied materials & interfaces.
[24] K. Nagashio,et al. Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system , 2015, 1511.07117.
[25] J. Ho,et al. Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation. , 2015, Small.
[26] R. Moriya,et al. Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors , 2015, 1506.00877.
[27] J. Robertson,et al. Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts , 2015 .
[28] A. Krasheninnikov,et al. Three-fold rotational defects in two-dimensional transition metal dichalcogenides , 2015, Nature Communications.
[29] A. Ando,et al. Fabrication of high-k/metal-gate MoS2 field-effect transistor by device isolation process utilizing Ar-plasma etching , 2015 .
[30] P. Jeon,et al. Trap density probing on top-gate MoS₂ nanosheet field-effect transistors by photo-excited charge collection spectroscopy. , 2015, Nanoscale.
[31] Junsong Yuan,et al. Exploring atomic defects in molybdenum disulphide monolayers , 2015, Nature Communications.
[32] D. Jena,et al. Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors , 2015, 1503.03015.
[33] Ning Wang,et al. Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures , 2014, Nature Communications.
[34] Sefaattin Tongay,et al. Doping against the native propensity of MoS2: degenerate hole doping by cation substitution. , 2014, Nano letters.
[35] K. Nagashio,et al. Subthreshold transport in mono- and multilayered MoS2 FETs , 2014 .
[36] Lei Liao,et al. Interface Engineering for High‐Performance Top‐Gated MoS2 Field‐Effect Transistors , 2014, Advanced materials.
[37] Ali Javey,et al. MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts. , 2014, Nano letters.
[38] Stephen McDonnell,et al. Defect-dominated doping and contact resistance in MoS2. , 2014, ACS nano.
[39] F. Xia,et al. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition , 2014, Nature Communications.
[40] John Robertson,et al. Sulfur vacancies in monolayer MoS2 and its electrical contacts , 2013 .
[41] F. Miao,et al. Hopping transport through defect-induced localized states in molybdenum disulphide , 2013, Nature Communications.
[42] Gerhard Tröster,et al. Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate. , 2013, ACS nano.
[43] Yoshihiro Iwasa,et al. Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor. , 2013, Nano letters.
[44] Jing Kong,et al. Intrinsic structural defects in monolayer molybdenum disulfide. , 2013, Nano letters.
[45] L. Lauhon,et al. Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors , 2013, 1304.5567.
[46] J. Appenzeller,et al. High performance multilayer MoS2 transistors with scandium contacts. , 2013, Nano letters.
[47] Michael S. Fuhrer,et al. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects , 2012, 1212.6292.
[48] Dominique Baillargeat,et al. From Bulk to Monolayer MoS2: Evolution of Raman Scattering , 2012 .
[49] Kinam Kim,et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals , 2012, Nature Communications.
[50] G. Scuseria,et al. The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory , 2011 .
[51] Arindam Ghosh,et al. Nature of electronic states in atomically thin MoS₂ field-effect transistors. , 2011, ACS nano.
[52] Thomas Heine,et al. Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2 , 2011, 1104.3670.
[53] Changgu Lee,et al. Anomalous lattice vibrations of single- and few-layer MoS2. , 2010, ACS nano.
[54] S. Takagi,et al. Quantitative understanding of inversion-layer capacitance in Si MOSFET's , 1995 .
[55] D. Fleetwood. 'Border traps' in MOS devices , 1992 .
[56] H. Haddara,et al. Conductance technique in MOSFETs: Study of interface trap properties in the depletion and weak inversion regimes , 1988 .
[57] P. Chow,et al. A new AC technique for accurate determination of channel charge and mobility in very thin gate MOSFET's , 1986, IEEE Transactions on Electron Devices.
[58] Takuo Sugano,et al. Theory of continuously distributed trap states at Si‐SiO2 interfaces , 1981 .
[59] Bruce E. Deal,et al. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers , 1981 .
[60] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[61] Yoshio Nishi,et al. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I , 1971 .
[62] C. N. Berglund. Surface states at steam-grown silicon-silicon dioxide interfaces , 1966 .
[63] F. Heiman,et al. The effects of oxide traps on the MOS capacitance , 1965 .