InSb photodetectors with PIN and nBn designs

InSb pin photodiodes and nBn photodetectors were fabricated by Molecular Beam epitaxy (MBE) on InSb (100) n-type substrate and characterized. MBE Growth conditions were carefully studied to obtain high quality InSb layers, exhibiting in pin photodiode design dark current density values as low as 13nA.cm-2 at -50mV and R0A product as high as 6x106 WΩcm2 at 77K. Then, a new unipolar nBn InSb/InAlSb/InSb detector structure on InSb substrate were designed in order to suppress generation-recombination dark current. The first InSb nBn devices were fabricated and preliminary electrical characterizations are reported.

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