Electrode Position Dependence of Energy Cost in Lateral-Current-Injection Membrane Distributed Reflector Laser

The energy cost of a lateral current injection (LCI) type membrane distributed reflector (DR) laser for electrode position was theoretically investigated. As a result, the optimal structure to minimize the energy cost was revealed.

[1]  H. C. Casey,et al.  Variation of intervalence band absorption with hole concentration in p‐type InP , 1984 .

[2]  Shigehisa Arai,et al.  Lasing characteristics of 1.5 mu m GaInAsP-InP SCH-BIG-DR lasers , 1991 .

[3]  K. Oe,et al.  GaInAsP lateral current injection lasers on semi-insulating substrates , 1994, IEEE Photonics Technology Letters.

[4]  Ali A. Rezazadeh,et al.  Empirical low-field mobility model for III-V compounds applicable in device simulation codes , 2000 .

[5]  D.A.B. Miller,et al.  Rationale and challenges for optical interconnects to electronic chips , 2000, Proceedings of the IEEE.

[6]  David A. B. Miller,et al.  Device Requirements for Optical Interconnects to Silicon Chips , 2009, Proceedings of the IEEE.

[7]  T. Okumura,et al.  GaInAsP/InP Membrane Lasers for Optical Interconnects , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[8]  P. Moser,et al.  81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects , 2011 .

[9]  Masaya Notomi,et al.  Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers , 2013, Nature Photonics.

[10]  Nobuhiko Nishiyama,et al.  Low-power and high-speed operation capabilities of semiconductor membrane lasers — Energy cost limited by Joule heat , 2014, 26th International Conference on Indium Phosphide and Related Materials (IPRM).

[11]  N. Nishiyama,et al.  Low-threshold-current operation of lateral current injection membrane distributed-feedback laser bonded on Si , 2014, 26th International Conference on Indium Phosphide and Related Materials (IPRM).