A CMOS Image Sensor Employing a Double Junction Photodiode

A CMOS image sensor that employs a vertically integrated double junction photodiode structure is presented. This allows colour imaging with only two, wider bandwidth, filters. The sensor uses a 184 x 154 6-transistor pixel array at a 9.6 μm pitch. Results of the device characterisation, and colour image reconstruction using the prototype sensor, are presented.