Characteristics of I2L at low current levels

The validity of the injection model is assessed in the low power range. Experimental evidence is given that the three base current components (I_{nc}, I_{no}, and Ip) can be determined from a three-gate experiment. The results are explained from the underlying device physics. Experimental data are presented for the temperature dependence of the upward current gain.

[1]  Robert Mertens,et al.  Calculation of the emitter efficiency of bipolar transistors , 1973 .

[2]  C. A. Grimbergen.  The influence of geometry on the interpretation of the current in epitaxial diodes , 1976 .

[3]  Dale Buhanan.  Investigation of current-gain temperature dependence in silicon transistors , 1969 .

[4]  Wolfgang M. Werner.  The Influence of Fixed Interface Charges on the Current‐Gain Falloff of Planar n‐p‐n Transistors , 1976 .

[5]  A. Slob,et al.  The effect of isolation regions on the current gain of inverse NPN-transistors used in Integrated Injection Logic (I 2 L) , 1974 .

[6]  B. E. Deal,et al.  Low‐Temperature Reduction of Fast Surface States Associated with Thermally Oxidized Silicon , 1971 .

[7]  H. Wulms,et al.  Base current of I2L transistors , 1976, 1976 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[8]  R. Mertens,et al.  Base current of I2L gates at low current levels , 1976, 1976 International Electron Devices Meeting.

[9]  F. Klaassen.  Device physics of integrated injection logic , 1975, IEEE Transactions on Electron Devices.

[10]  H. C. de Graaff,et al.  Measurements of bandgap narrowing in Si bipolar transistors , 1976 .

[11]  A. S. Grove,et al.  Surface recombination in semiconductors , 1968 .

[12]  H. H. Berger,et al.  The injection model-a structure-oriented model for merged transistor logic (MTL) , 1974 .

[13]  W. Kauffman,et al.  The temperature dependence of ideal gain in double diffused silicon transistors , 1968 .