Role of ZrO2 incorporation in the suppression of negative bias illumination- induced instability in Zn-Sn-O thin film transistors

Thin film transistors (TFTs) with In and Ga-free multicomponent Zn–Sn–Zr–O (ZTZO) channel layers were fabricated using the cosputtering approach. The incorporation of ZrO2 into the Zn–Sn–O (ZTO) films increased the contact resistance, which led to the degradation of the transport properties. In contrast, the threshold voltage shift under negative bias illumination stress (NBIS) was largely improved from −12.5 V (ZTO device) to −4.2 V (ZTZO device). This improvement was attributed to the reduction in the oxygen vacancy defects in the ZTZO film, suggesting that the photoinduced transition from VO to VO2+ was responsible for the NBIS-induced instability.

[1]  John F. Muth,et al.  Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors , 2008 .

[2]  A. Janotti,et al.  Native point defects in ZnO , 2007 .

[3]  J. Myoung,et al.  Reliable Bottom Gate Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors with TiOx Passivation Layer , 2009 .

[4]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[5]  M. Kanatzidis,et al.  High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors. , 2010, Journal of the American Chemical Society.

[6]  Jae Kyeong Jeong,et al.  High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability , 2010, IEEE Electron Device Letters.

[7]  Po-Tsun Liu,et al.  Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress , 2009 .

[8]  Sang-Hee Ko Park,et al.  Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors , 2009 .

[9]  Chi-Sun Hwang,et al.  Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics , 2010, IEEE Electron Device Letters.

[10]  Hideo Hosono,et al.  Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors , 2009 .

[11]  B. Ryu,et al.  O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors , 2010, 1006.4913.

[12]  D. Schroder.  Semiconductor Material and Device Characterization , 1990 .

[13]  Dieter K. Schroder,et al.  Semiconductor Material and Device Characterization: Schroder/Semiconductor Material and Device Characterization, Third Edition , 2005 .

[14]  Jin Jang,et al.  Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer , 2010 .

[15]  Andrea Chipman,et al.  A commodity no more , 2007, Nature.

[16]  Jang-Yeon Kwon,et al.  The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor , 2010 .

[17]  Jang-Yeon Kwon,et al.  The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors , 2009 .

[18]  Sung-Min Yoon,et al.  Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor , 2010 .

[19]  Yeon-Gon Mo,et al.  Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors , 2008 .

[20]  Jin Jang,et al.  Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors , 2010 .

[21]  Bon Seog Gu,et al.  12.1‐in. WXGA AMOLED display driven by InGaZnO thin‐film transistors , 2009 .

[22]  A. Zunger,et al.  Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors , 2005, cond-mat/0503018.

[23]  Jin-seong Park,et al.  The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors , 2009 .

[24]  J. Kanicki,et al.  Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors , 2009, Journal of Display Technology.