Hardening effect in Zn-doped cadmium sulphide crystals
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[1] R. Fornari,et al. Dislocation-free silicon-doped gallium arsenide grown by LEC procedure , 1983 .
[2] G. Attolini,et al. Growth of CdS single crystals by hydrogen chemical transort , 1983 .
[3] L. Suchow. Effect of impurity atom size on grown-in dislocation density of crystals of III–V compounds , 1982 .
[4] G. Jacob. A novel crystal growth method for GaAs: The liquid encapsulated kyropoulos method , 1982 .
[5] G. Attolini,et al. Growth of cadmium sulphide single crystals by vapour-phase hydrogen transport , 1982 .
[6] G. Attolini,et al. Interface kinetics and the vapour phase mass transport in closed tube CdS:I2‐system , 1979 .
[7] G. Attolini,et al. Iodine detection in iodine-doped CdS single crystals , 1977 .
[8] J. Matsui,et al. Impurity effect on the growth of dislocation‐free InP single crystals , 1976 .
[9] G. W. Cullen,et al. Growth of Crystals from the Vapour , 1975 .
[10] G. H. Westphal,et al. Constitutional supersaturation revisited , 1975 .
[11] E. Kaldis. Crystal growth and growth rates of CdS by sublimation and chemical transport , 1969 .
[12] T. Reed,et al. Diffusion and convection in vapor crystal growth , 1968 .
[13] T. Reed,et al. CONSTITUTIONAL SUPERCOOLING IN IODINE VAPOR CRYSTAL GROWTH , 1964 .