High-brightness diode lasers

Abstract The basic concepts and some modelling aspects of high-brightness semiconductor lasers are reviewed. The technology of lasers with a tapered gain-region is described. They provide the highest brightness of a semiconductor source with continuous wave emission in the visible and near infrared spectral range. Experimental results are presented for tapered lasers emitting at 735 nm and 808 nm. Output powers of 3 W were achieved in nearly diffraction limited beams. To cite this article: H. Wenzel et al., C. R. Physique 4 (2003).

[1]  Hans Wenzel,et al.  Beam quality of high power 800 nm broad-area laser diodes with 1 and 2 μm large optical cavity structures , 2001 .

[2]  Klaus Vogel,et al.  Optimization of GaAsP-QWs for high-power diode lasers at 800 nm , 2000, Photonics West - Optoelectronic Materials and Devices.

[3]  G. Erbert,et al.  Mounting of high power laser diodes on boron nitride heat sinks using an optimized Au/Sn metallurgy , 2001 .

[4]  D. Welch,et al.  Operating characteristics of a high-power monolithically integrated flared amplifier master oscillator power amplifier , 1993 .

[5]  D. Welch,et al.  4.5 W CW, near-diffraction-limited tapered-stripe semiconductor optical amplifier , 1993 .

[6]  G. Erbert,et al.  Simulation of the generation of high-power pulses in the GHz range with three-section DBR lasers , 2002 .

[7]  G. Dente,et al.  Low confinement factors for suppressed filaments in semiconductor lasers , 2001 .

[8]  Michael Mikulla,et al.  Modeling of the performance of high-brightness tapered lasers , 2000, Photonics West - Optoelectronic Materials and Devices.

[9]  H. Wenzel,et al.  Calculation of combined lateral and longitudinal spatial hole burning in lambda /4 shifted DFB lasers , 1993 .

[10]  Bernd Sumpf,et al.  3-W high-brightness tapered diode lasers at 735 nm based on tensile-strained GaAsP QWs , 2003, SPIE OPTO.

[11]  G. Tränkle,et al.  High-brightness 735 nm tapered diode lasers , 2002 .

[12]  M. Weyers,et al.  High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm , 1999 .

[13]  G. Erbert,et al.  Modeling and measurements of the radiative characteristics of high-power /spl alpha/-DFB lasers , 2003 .

[14]  P. Enders,et al.  Improved theory of the refractive-index change in quantum-well lasers , 1999 .

[15]  Dan Botez,et al.  Design considerations and analytical approximations for high continuous-wave power, broad-waveguide diode lasers , 1999 .

[16]  Francois Boubal,et al.  How to launch 1 W into single-mode fiber from a single 1.48-/spl mu/m flared resonator , 2001 .

[17]  A. Napoleone,et al.  Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power , 1996, IEEE Photonics Technology Letters.

[18]  R. Poprawe,et al.  Manufacturing with novel high-power diode lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[19]  M. Krakowski,et al.  Hot-cavity modelling of high-power tapered laser diodes using wide-angle 3D FD-BPM , 2002, The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society.

[20]  Anthony E. Siegman,et al.  New developments in laser resonators , 1990, Photonics West - Lasers and Applications in Science and Engineering.

[21]  S. O'Brien,et al.  2.2-W continuous-wave diffraction-limited monolithically integrated master oscillator power amplifier at 854 nm , 1997, IEEE Photonics Technology Letters.

[22]  A. Wetzel,et al.  High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures , 1998, IEEE Photonics Technology Letters.

[23]  M. L. Tilton,et al.  Modeling multiple-longitudinal-mode dynamics in semiconductor lasers , 1998 .

[24]  R. Lang,et al.  5-W CW diffraction-limited InGaAs broad-area flared amplifier at 970 nm , 1997, IEEE Photonics Technology Letters.

[25]  H. Gollnick,et al.  Photodynamic Therapy in Dermatology , 2012 .

[26]  Trevor M. Benson,et al.  Nonlinear properties of tapered laser cavities , 2003 .

[27]  J. Sebastian,et al.  High brightness 735 nm tapered lasers – optimisation of the laser geometry , 2003 .

[28]  David G. Mehuys,et al.  5W, diffraction-limited, tapered-stripe unstable resonator semiconductor laser , 1994 .

[29]  M. Weyers,et al.  Influence of oxygen in AlGaAs-based laser structures with Al-Free active region on device properties , 2001 .

[30]  Ortwin Hess,et al.  Modeling of the performance of high-power diode amplifier systems with an optothermal microscopic spatio-temporal theory , 1999 .

[31]  Joachim Piprek,et al.  Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation , 2003 .

[32]  Trevor M. Benson,et al.  Self-consistent electrical, thermal, and optical model of high-brightness tapered lasers , 2002, SPIE OPTO.

[33]  Hans Wenzel,et al.  Simulation of single-mode high-power semiconductor lasers , 1996, Photonics West.

[34]  G. Agrawal.  Fiber‐Optic Communication Systems , 2021 .

[35]  Cun-Zheng Ning,et al.  Dynamic instabilities in master oscillator power amplifier semiconductor lasers , 1998 .

[36]  J. N. Walpole,et al.  Semiconductor amplifiers and lasers with tapered gain regions , 1996 .

[37]  H. Wünsche,et al.  A Model for the Calculation of the Threshold Current of SCH-MQW-SAS Lasers , 1990 .

[38]  G. Erbert,et al.  Gain spectra measurements by a variable stripe length method with current injection , 1997 .

[39]  Rolf Aidam,et al.  High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm , 2005, SPIE OPTO.

[40]  R. Lang,et al.  External optical feedback effects on semiconductor injection laser properties , 1980 .

[41]  A. Napoleone,et al.  1.5-μm tapered-gain-region lasers with high-CW output powers , 1998, IEEE Photonics Technology Letters.

[42]  S. Chinn,et al.  High-power, strained-layer amplifiers and lasers with tapered gain regions , 1993, IEEE Photonics Technology Letters.