Optimized emitter-injection modulation magnetotransistor

Abstract The magnetic-field sensitivity of a novel lateral p-n-p magnetotransistor with a double base contact is investigated experimentally. At low collector current levels, its magnetosensitivity increases exponentially by one to two orders of magnitude due to the emitter-injection modulation, caused by the Hall voltage, created in the base region. By selection of appropriate operating conditions and optimized positioning of the collector, the normally nonlinear output characteristic of the magnetotransistor is linearized. Based on this, a dual-collector differential version with linear output is developed.