论文信息 - High-voltage resurf DMOS process development using covariance-based response surfaces

High-voltage resurf DMOS process development using covariance-based response surfaces

This paper compares the performance of quadratic and covariance models for a RESURF device. TCAD is used in conjunction with a CCI design and both response surfaces and response variances are compared for both models. Experimentally measured distributions are compared with those predicted by TCAD and the differences used to help identify other possible sources of variation.

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