论文信息 - Optically pumped laser oscillation at 3.82 μm from InAs1−xSbx grown by molecular beam epitaxy on GaSb

Optically pumped laser oscillation at 3.82 μm from InAs1−xSbx grown by molecular beam epitaxy on GaSb

Molecular beam epitaxy has been used to grow InAs/sub 1-x/Sb/sub x/ active layers on GaSb substrates. Lattice matches of better than 10/sup -3/ were obtained with xapprox. =0.09. Index waveguiding of the relatively low refractive index InAs/sub 1-x/Sb/sub x/ is obtained by using an adjacent GaSb guiding layer and a lower refractive index Al/sub 0.5/Ga/sub 0.5/Sb cladding layer. Optically pumped laser emission at 3.82 ..mu..m has been observed from 77 to 135 K with a T/sub 0/ = 15.9 K.

W. Tsang | J. P. Ziel | T. Chiu

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