Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors

This paper reports on an extensive analysis of the electroluminescence spectra of GaN-based high-electron mobility transistors (HEMT) submitted to different bias regimes. The results described within this paper indicate that: (i) under ON-state bias conditions, HEMT can emit a weak luminescence signal, localized at the edge of the gate toward the drain side; (ii) for low drain voltage levels, the electroluminescence spectrum has a Maxwellian shape, which is typical for hot carrier luminescence; (iii) for high drain voltage levels, parasitic emission bands are generated, possibly due to the recombination of hot electrons through defect-related sites. Electroluminescence data are compared with results of cathodoluminescence measurements, to provide an interpretation for the experimental results.

[1]  Toshiaki Matsui,et al.  30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz , 2006 .

[2]  Fan-Hsiu Huang,et al.  DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths , 2010 .

[3]  Tetsuya Suemitsu,et al.  Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors , 2001 .

[4]  Eicke R. Weber,et al.  Selective excitation and thermal quenching of the yellow luminescence of GaN , 1999 .

[5]  Ronald D. Schrimpf,et al.  Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors , 2010 .

[6]  M. Meneghini,et al.  Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing , 2009, IEEE Electron Device Letters.

[7]  G. Simin,et al.  Field-plate engineering for HFETs , 2005, IEEE Transactions on Electron Devices.

[8]  T. Enoki,et al.  Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates , 1995, IEEE Electron Device Letters.

[9]  Jing Li,et al.  Nature of deep center emissions in GaN , 2010 .

[10]  Luca Selmi,et al.  Verification of electron distributions in silicon by means of hot carrier luminescence measurements , 1998 .

[11]  Jianjun Zhu,et al.  Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films , 2009 .

[12]  G. Verzellesi,et al.  Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives , 2008, IEEE Transactions on Device and Materials Reliability.

[13]  G. Pataut,et al.  Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC , 2007, Microelectron. Reliab..

[14]  C. Canali,et al.  Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors , 1995 .

[15]  A. G. Chynoweth,et al.  Ionization Rates for Electrons and Holes in Silicon , 1958 .

[16]  José Luis Sánchez-Rojas,et al.  Yellow luminescence and related deep states in undoped GaN , 1997 .

[17]  G. Meneghesso,et al.  Anomalous Kink Effect in GaN High Electron Mobility Transistors , 2009, IEEE Electron Device Letters.

[18]  Tetsuya Suemitsu,et al.  Optical study of high-biased AlGaN/GaN high-electron-mobility transistors , 2002 .

[19]  Hari Singh Nalwa,et al.  Handbook of advanced electronic and photonic materials and devices , 2001 .