Low-Frequency Noise and Microwave Noise Parameters in Si/SiGe Heterojunction Bipolar Transistors

First results on low-frequency noise (250 Hz-100 kHz) and microwave noise parameters (4 GHz-20 GHz) observed in a microwave Si/SiGe heterojunction bipolar transistors (1 μm × 20 μm) featuring current gain cut-off frequency of 90 GHz and a maximum oscillation frequency of 30 GHz are reported and discussed. All measurements have been performed on wafer using dedicated techniques.