论文信息 - High-performance K-band GaAs power field-effect transistors prepared by molecular beam epitaxy

High-performance K-band GaAs power field-effect transistors prepared by molecular beam epitaxy

The maturity of the molecular beam epitaxy (MBE) technique for preparing device quality GaAs material for microwave applications is demonstrated by the excellent performance characteristics of K‐band GaAs power field‐effect transistors (FET’s) fabricated on the MBE wafers. An output power of 710 mW with 4.5‐dB gain and 17.7% power‐added efficiency was achieved at 21 GHz with a 1.26‐mm gate width π‐gate device. A similar device with a 0.56‐mm gate width produced an output power of 320 mW with 5.0‐dB gain and 26.6% power‐added efficiency at 21 GHz. These are the best results yet reported to date for GaAs power FET’s operated in the K‐band frequency range.

H. D. Shih | P. Saunier | P. Saunier | H. Shih

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