Ultra-Low Power 3D NC-FinFET-based Monolithic 3D+ -IC with Computing-in-Memory for Intelligent IoT Devices

For the first time, ultra-low power ferroelectric FinFET-based monolithic 3D⁺-IC technology was demonstrated for near memory computing (NMC) circuit. Key enablers are ICP-SiO<inf>2</inf> interfacial layer, doped hafnia ferroelectric gate dielectric layer (HfZrO<inf>2</inf>), and far-infrared laser activation. The proposed stackable 3D NC-FinFETs thus fabricated exhibit record-low sub-threshold swing (NC-nFinFET: 45mV/dec and NC-pFinFET: 50mV/dec) and high I<inf>on</inf>/I<inf>off</inf> (>10⁶) that enable ultra-low power operation <tex>$(\mathrm{V}_{\text{DD}}=100\text{mV})$</tex> of CMOS inverter and SRAM. Moreover, above mentioned features of NC-FinFETs and the differential output of SRAM readout enable 50+% area reduction in the near-memory computing circuitry.