AlGaN/GaN MOSHFET integrated circuit power converter

This work introduces the first step in a version of a wide-bandwidth, frequency-agile power interface that can sit between a simulation environment and real electrical hardware. Silicon (Si) technology is incapable of meeting the extreme switching demands of such a power interface, while gallium-nitride (GaN) technology is best suited for this application. A GaN power cell, in the form of an integrated H-bridge power block, is used as the core element in this new interface to take advantage of the III-V semiconductor material properties, resulting in enhanced operating characteristics. The GaN integrated H-bridge transistors are constructed out of AIGaN/GaN, MOS-Hetero-junction FETs (MOSHFETs). The H-bridge is mounted to an aluminum nitride (AIN) substrate for heat removal via a thermally conducting, electrically insulating, epoxy. This wide bandgap power converter utilizes a high- and low-side driver to modulate the gate-source voltage of each device between +5 V and -12 V. Control for the power converter is provided via a dual output pulse generator. The pulse generator operates open-loop with two outputs to experimentally test the H-bridge in a half-bridge converter topology under different loading conditions.

[1]  B. J. Baliga,et al.  Semiconductors for high‐voltage, vertical channel field‐effect transistors , 1982 .

[2]  S. Sze,et al.  AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p‐n JUNCTIONS IN Ge, Si, GaAs, AND GaP , 1966 .

[3]  Michael S. Shur,et al.  Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications , 2003 .

[4]  B. J. Baliga,et al.  Comparison of 6H-SiC, 3C-SiC, and Si for power devices , 1993 .

[5]  B. J. Baliga,et al.  Power semiconductor device figure of merit for high-frequency applications , 1989, IEEE Electron Device Letters.

[6]  A. Monti,et al.  FPGA based sliding mode control for high frequency power converters , 2004, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).

[7]  A. Lunev,et al.  AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor , 2000, IEEE Electron Device Letters.

[8]  Dynamic current-voltage characteristics of III-N HFETs , 2003, IEEE Electron Device Letters.

[9]  Michael S. Shur,et al.  AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates , 2000 .

[10]  E. Santi,et al.  An assessment of wide bandgap semiconductors for power devices , 2003 .

[11]  T. P. Chow,et al.  Wide bandgap compound semiconductors for superior high-voltage unipolar power devices , 1994 .

[12]  A. Tarakji,et al.  Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging , 2001, IEEE Electron Device Letters.