Development of low inductance circuit for radially symmetric circuit

The switch of the radially-symmetric circuit using semiconductors of SiC-MOSFET, which is one of the next-generation semiconductors, consists of a circuit in which many semiconductor switches are arrayed in parallel. Since all parallel circuits are equal in length, distortion due to timing jitter or impedance difference does not occur on principle in the merged output waveform. This circuit is useful for outputting an ultrashort pulse waveform. Therefore, we have developed a circuit board that achieves even lower inductance of the power transmission circuit by making a double ring structure equivalent to a coaxial shape. We compare the results of calculation, analysis and measurement, and the superiority of the developed coaxial-type is presented here.