A simple model of the threshold voltage of short and narrow channel MOSFETs

Abstract Simple but reasonably accurate equations are proposed which describe the behavior of threshold voltage for short and narrow-channel MOSFETs, for low drain-source voltages. It will be shown that good agreement is obtained between the model, experiment and two dimensional calculations, for channel lengths and widths as small as 1 ∼ 2 μm. Moreover, by careful analysis of the model results, some new properties of the threshold voltage of small size devices can be derived.