Potential and Field Distributions in LDD Structures in the Subthreshold Region

An analytical model for the potential and the field distri- butions in LDD MOSFET structures operating in the subthreshold re- gion is developed by solving the quasi-two-dimensional Poisson's equa- tions. The model includes the effect of the gate voltage, but ignores the mobile charge density. The result is useful for predicting the incipient breakdown in lateral power MOSFET's that are designed to block high