Passivation effects of deuterium exposure on boron-doped CVD homoepitaxial diamond

[1]  S. Yamasaki,et al.  n-type doping of (001)-oriented single-crystalline diamond by phosphorus , 2005 .

[2]  H. Kanda,et al.  Lightly phosphorus-doped homoepitaxial diamond films grown by chemical vapor deposition , 2004 .

[3]  J. Butler,et al.  Conversion of p-type to n-type diamond by exposure to a deuterium plasma , 2004 .

[4]  S. Yamasaki,et al.  EPR study of hydrogen-related defects in boron-doped p-type CVD homoepitaxial diamond films , 2004 .

[5]  J. Butler,et al.  Shallow donor induced n‐type conductivity in deuterated boron‐doped diamond , 2004 .

[6]  J. Butler,et al.  n-type diamond with high room temperature electrical conductivity by deuteration of boron doped diamond layers , 2004 .

[7]  R. Jones,et al.  Deep hydrogen traps in heavily B-doped diamond , 2003 .

[8]  J. Butler,et al.  Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers , 2003, Nature materials.

[9]  M. Heggie,et al.  First Principles Studies of H in Diamond , 2001 .

[10]  A. Lusson,et al.  Hydrogen-acceptor interactions in diamond , 2001 .

[11]  H. Okushi,et al.  Low‐Compensated Boron‐Doped Homoepitaxial Diamond Films Using Trimethylboron , 1999 .

[12]  M. Stutzmann,et al.  Passivation of boron in diamond by deuterium , 1999 .

[13]  H. Okushi,et al.  High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron , 1998 .

[14]  A. Deneuville,et al.  Hydrogen-boron interactions in p-type diamond , 1998 .

[15]  J. Suehle,et al.  The Use of a Double Mask System to Prevent Ti Diffusion from a Ti/Pt/Au Ohmic Contact on Diamond , 1996 .

[16]  A. T. Collins,et al.  The nature of the acceptor centre in semiconducting diamond , 1971 .