An Annular Mechanical Temperature Compensation Structure for Gas-Sealed Capacitive Pressure Sensor

A novel gas-sealed capacitive pressure sensor with a temperature compensation structure is reported. The pressure sensor is sealed by Au-Au diffusion bonding under a nitrogen ambient with a pressure of 100 kPa and integrated with a platinum resistor-based temperature sensor for human activity monitoring applications. The capacitance-pressure and capacitance-temperature characteristics of the gas-sealed capacitive pressure sensor without temperature compensation structure are calculated. It is found by simulation that a ring-shaped structure on the diaphragm of the pressure sensor can mechanically suppress the thermal expansion effect of the sealed gas in the cavity. Pressure sensors without/with temperature compensation structures are fabricated and measured. Through measured results, it is verified that the calculation model is accurate. Using the compensation structures with a 900 μm inner radius, the measured temperature coefficient is much reduced as compared to that of the pressure sensor without compensation. The sensitivities of the pressure sensor before and after compensation are almost the same in the pressure range from 80 kPa to 100 kPa.

[1]  S. BRODETSKY,et al.  Theory of Plates and Shells , 1941, Nature.

[2]  K. Wise,et al.  A batch-fabricated silicon capacitive pressure transducer with low temperature sensitivity , 1982, IEEE Transactions on Electron Devices.

[3]  Masayoshi Esashi,et al.  Digital compensated capacitive pressure sensor using CMOS technology for low pressure measurements , 1991, TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers.

[4]  Masayoshi Esashi,et al.  Digital compensated capacitive pressure sensor using CMOS technology for low-pressure measurements☆ , 1992 .

[5]  A miniature self-aligned pressure sensing element , 1996 .

[6]  Masayoshi Esashi,et al.  A novel electrostatic servo capacitive vacuum sensor , 1997, Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97).

[7]  Yogesh B. Gianchandani,et al.  A capacitive absolute-pressure sensor with external pick-off electrodes , 2000 .

[8]  R. F. WoHenbuttel Low-temperature silicon wafer-to-wafer bonding using gold at eutectic temperature , 2001 .

[9]  Kyihwan Park,et al.  Design optimization of a piezoresistive pressure sensor considering the output signal-to-noise ratio , 2004 .

[10]  Chang Q. Sun,et al.  Length, Strength, Extensibility, and Thermal Stability of a Au−Au Bond in the Gold Monatomic Chain , 2004 .

[11]  Sung-Pil Chang,et al.  Demonstration for integrating capacitive pressure sensors with read-out circuitry on stainless steel substrate , 2004 .

[12]  M. Mehregany,et al.  Fabrication and testing of bulk micromachined silicon carbide piezoresistive pressure sensors for high temperature applications , 2006, IEEE Sensors Journal.

[13]  Ming Qin,et al.  A silicon directly bonded capacitive absolute pressure sensor , 2007 .

[14]  T. Fujita,et al.  Application of Multi-Environmental Sensing System in MEMS Technology - Monitoring of Human Activity , 2007, 2007 Fourth International Conference on Networked Sensing Systems.

[15]  T. Suga,et al.  Au–Au Surface-Activated Bonding and Its Application to Optical Microsensors With 3-D Structure , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[16]  K. Maenaka,et al.  Zero temperature coefficient gas-sealed pressure sensor using mechanical temperature compensation , 2011, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference.