A 1.8e $^{-}_{\mathrm {rms}} $ Temporal Noise Over 110-dB-Dynamic Range 3.4 $\mu \text{m}$ Pixel Pitch Global-Shutter CMOS Image Sensor With Dual-Gain Amplifiers SS-ADC, Light Guide Structure, and Multiple-Accumulation Shutter

A 1.8e<inline-formula> <tex-math notation="LaTeX">$^{-}_{\mathrm {rms}} $ </tex-math></inline-formula> temporal noise over 110 dB dynamic range 3.4 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> pixel pitch global shutter (GS) CMOS image sensor (CIS) single-slope analog digital converters (ADCs) with dual-gain amplifier (SSDG-ADC), light guide (LG) structure, and multiple-accumulation shutter has been developed for various accuracy required applications. The newly developed CIS pixel achieves low noise, high saturation, high sensitivity, and high frame rate with seamless GS function. Low noise, high saturation, and high frame rate are realized by small photodiode, large charge-domain memory, and seamless multiple-accumulation readout procedure with SSDG-ADC. Furthermore, high sensitivity is realized by the optimized shape LG structure. The GS CIS is fabricated in a 130 nm 1Poly-Si 4Metal with light shield CMOS process. This image sensor achieves 1.8e<inline-formula> <tex-math notation="LaTeX">$^{-}_{\mathrm {rms}} $ </tex-math></inline-formula> temporal noise, 16 200e<sup>−</sup> full-well capacity with 60 fps multiple-accumulation and 28 000e<sup>−</sup>/lx<inline-formula> <tex-math notation="LaTeX">$\cdot \text{s}$ </tex-math></inline-formula> sensitivity. This image sensor also realizes high-dynamic range readout procedure and in-pixel coded exposure for deblurred images. We also describe the examination results about the relationship of the sensitivity, parasitic light sensitivity, and LG structure.

[1]  Daisuke Yoshida,et al.  6.4 An APS-H-Size 250Mpixel CMOS image sensor using column single-slope ADCs with dual-gain amplifiers , 2016, 2016 IEEE International Solid-State Circuits Conference (ISSCC).

[2]  Sergey Velichko,et al.  Low Noise High Efficiency 3.75 µm and 2.8 µm Global Shutter CMOS Pixel Arrays , 2013 .

[3]  Masahiro Kobayashi,et al.  4.5 A 1.8erms− temporal noise over 110dB dynamic range 3.4µm pixel pitch global shutter CMOS image sensor with dual-gain amplifiers, SS-ADC and multiple-accumulation shutter , 2017, 2017 IEEE International Solid-State Circuits Conference (ISSCC).

[4]  Takashi Machida,et al.  An 83dB-dynamic-range single-exposure global-shutter CMOS image sensor with in-pixel dual storage , 2012, 2012 IEEE International Solid-State Circuits Conference.

[5]  Muto Takashi,et al.  An APS-H-Size 250Mpixel CMOS Image Sensor Using Column Single-Slope ADCs with Dual-Gain Amplifiers , 2016 .

[6]  Ramesh Raskar,et al.  Coded exposure photography: motion deblurring using fluttered shutter , 2006, SIGGRAPH 2006.

[7]  Hidekazu Takahashi,et al.  A 1.8e− temporal noise over 90dB dynamic range 4k2k super 35mm format seamless global shutter CMOS image sensor with multiple accumulation shutter technology , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[8]  Takuya Nakamura,et al.  An 8.3M-pixel 480fps global-shutter CMOS image sensor with gain-adaptive column ADCs and 2-on-1 stacked device structure , 2016, 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits).