论文信息 - A reverse base current under high level injection and its influence on BiCMOS circuit

A reverse base current under high level injection and its influence on BiCMOS circuit

The base pushout induced reverse base current (I/sub RB/) at high level injection was observed and analyzed. A simple model to describe this phenomenon was also proposed. The I/sub RB/ is described universally by this model even if collector conditions are varied. The I/sub RB/ increases with decreasing device temperature and is suppressed by voltage drop at the external base region due to carrier freeze-out. This reverse base current causes failure on the BiCMOS circuit and gives a new limitation for applied power supply voltage.<<ETX>>

[1] C. T. Kirk,et al. A theory of transistor cutoff frequency (fT) falloff at high current densities , 1962, IRE Transactions on Electron Devices.

[2] D. Tremere,et al. Current gain and cutoff frequency falloff at high currents , 1969 .

[3] V. D. Archer,et al. Characteristics of impact-ionization current in the advanced self-aligned polysilicon-emitter bipolar transistor , 1991 .

[4] J. D. Chlipala,et al. Explosion of poly-silicide links in laser programmable redundancy for VLSI memory repair , 1989 .

[5] H. Satake,et al. Low-temperature (77 K) BJT model with temperature dependences on the injected condition and base resistance , 1990 .

[6] Shigeyoshi Watanabe,et al. A new static memory cell based on the reverse base current effect of bipolar transistors , 1989 .

[7] M. Reisch. Carrier Multiplication and Avalanche Breakdown in Self-Aligned Bipolar Transistors , 1987, ESSDERC '87: 17th European Solid State Device Research Conference.

[8] K. Jenkins,et al. On the low-temperature static and dynamic properties of high-performance silicon bipolar transistors , 1989 .

[9] Jinhong Yuan,et al. An avalanche multiplication model for bipolar transistors , 1990 .