High-speed Lateral Photodetectors On Semi-Insulating InGaAs and InP

A new type of high-performance, planar PIN photodetector operating in the 1.0-1.6 μm wavelength region has been fabricated on semi-insulating InP and InGaAs entirely by formation of alloyed contacts. Their planar geometry and simple fabrication process, that does not require a separate step to form the junction, together with their high speed under reverse bias (FWHM . 50 ps) and sensitivity (n ≈ 40% at λ = 1.24μm, without anti-reflection coating) make these devices attractive for integration with FETs and for photodetector arrays.