Experimental characterization of the mechanical behavior of two solder alloys for high temperature power electronics applications
暂无分享,去创建一个
Olivier Dalverny | Moussa Karama | Joël Alexis | Sabeur Msolli | O. Dalverny | M. Karama | J. Alexis | S. Msolli
[1] Helmut Antrekowitsch,et al. The effect of main alloying elements on the physical properties of Al–Si foundry alloys , 2013 .
[2] H. Schneider,et al. An assessment of contact metallization for high power and high temperature diamond Schottky devices , 2012 .
[3] A. Bandyopadhyay,et al. Laser processing of bulk Al–12Si alloy: influence of microstructure on thermal properties , 2011 .
[4] H. Schneider,et al. Electrical and mechanical characterisation of Si/Al ohmic contacts on diamond , 2010 .
[5] C. Gobl,et al. Low temperature sinter technology die attachment for power electronic applications , 2010, 2010 6th International Conference on Integrated Power Electronics Systems.
[6] Ryszard Kisiel,et al. Die-attachment solutions for SiC power devices , 2009, Microelectron. Reliab..
[7] P. Quintero. Development of a Shifting Melting Point Ag-In Paste Via Transient Liquid Phase Sintering for High Temperature Environments , 2008 .
[8] S. J. Rashid,et al. On-state behaviour of diamond Schottky diodes , 2008 .
[9] T. Grotjohn,et al. Microwave plasma-assisted etching of diamond , 2008 .
[10] Yi Liu,et al. Power Device Packaging Technologies for Extreme Environments , 2007, IEEE Transactions on Electronics Packaging Manufacturing.
[11] Xitao Wang,et al. Properties of Two New Medium Temperature Solders , 2007, International Symposium on High Density packaging and Microsystem Integration.
[12] Chin C. Lee,et al. Fluxless bonding of silicon to Ag-cladded copper using Sn-based alloys , 2007 .
[13] R. Johnson,et al. Contact Metallization and Packaging Technology Development for SiC Bipolar Junction Transistors, PiN Diodes, and Schottky Diodes Designed for Long-Term Operations at 350degreeC , 2006 .
[14] Guna S Selvaduray,et al. Solder joint fatigue models: review and applicability to chip scale packages , 2000 .
[15] F. Patrick McCluskey,et al. High Temperature Electronics , 1997 .
[16] Chin C. Lee,et al. Au-In bonding below the eutectic temperature , 1993 .
[17] G. Pharr,et al. An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments , 1992 .
[18] Dirk Siepe,et al. New assembly and interconnects beyond sintering methods , 2010 .
[19] M. Mojarradi,et al. EXTREME ENVIRONMENT ELECTRONIC PACKAGING FOR VENUS AND MARS LANDED MISSIONS , 2007 .
[20] John R. Fraley,et al. HIGH TEMPERATURE ELECTRONICS ( > 485 ° C ) FOR VENUS EXPLORATION , 2006 .
[21] J. W. Meredith,et al. Microelectronics reliability , 1988, IEEE Region 5 Conference, 1988: 'Spanning the Peaks of Electrotechnology'.