Sub-monolayer InAs/InGaAs quantum dot infrared photodetectors (SML-QDIP)

We have investigated optical properties and figures of merit of sub-monolayer quantum dots (SML-QD) infrared photodetector and compared them with conventional Stranski-Krastanov quantum dots (SK-QD) with a similar design. The purpose of this study is to examine the effects of varying the number of stacks(2,3,4,5 and 6) in SML-QD detector on its device performance The peak of photoluminescence (PL) spectra of SK-QD and SML-QDs are observed at 1.07eV and 1.24~1.35eV at room temperature, respectively. The PL peak of 2 and 3 stacks SML QD are very close to the GaAs band edge peak (1.42eV) and the full width at half maximum (FWHM) of all the SML-QD are much narrower than SK-QD. Normal incidence photoresponse peak of 4 stacks SML QDIP are obtained at 7.5μm with responsivity of 0.5 A/W and detectivity of 1.2×1011 cm.Hz1/2/W (77K, 0.4V, f/2 optics), which is much narrower than spectral response of SK QDIP possibly due to bound-to-bound transition.

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