论文信息 - High fluence implantation of nitrogen into titanium: Fluence dependence of sputtering yield, retained fluence and nitrogen depth profile - 字舞流文

High fluence implantation of nitrogen into titanium: Fluence dependence of sputtering yield, retained fluence and nitrogen depth profile

S. Miyagawa | S. Nakao | Y. Miyagawa | M. Ikeyama | K. Saitoh

[1] S. Miyagawa,et al. Formation of β‐Si3N4 by nitrogen implantation into SiC , 1995 .

[2] S. Miyagawa,et al. Retention of nitrogen implanted into metals , 1995 .

[3] S. Miyagawa,et al. Thermal behaviour of nitrogen implanted into zirconium , 1994 .

[4] Kazuo Saito,et al. Computer simulation of dose effects on composition profiles under ion implantation , 1991 .

[5] F. Cui,et al. MeV ion implantation of N into Ti for surface hardening , 1988 .

[6] Bai-xin Liu,et al. Reverse sequence of formation of titanium nitrides by nitrogen implantation , 1988 .

[7] B. Rauschenbach. Formation of compounds by high-flux nitrogen ion implantation in titanium , 1986 .

[8] J. Keinonen,et al. Nitrogen implantation of metals , 1985 .

[9] N. Moncoffre,et al. Redistribution of nitrogen implanted into iron: role of carbon and radiation defects , 1994 .

[10] Wolfgang Eckstein,et al. Computer simulation of ion-solid interactions , 1991 .