Challenges for immersion lithography extension based on negative tone imaging (NTI) process
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Naoya Hatakeyama | Mitsuhiro Fujita | Michihiro Shirakawa | Tadashi Omatsu | Keiyu Ou | Yasunori Yonekuta | Daisuke Asakawa | Takashi Yakushiji | Nanae Muraki
[1] Shinichiro Kawakami,et al. Negative-tone imaging (NTI) at the 22nm node: process and material development , 2011, Advanced Lithography.
[2] Carlos Fonseca,et al. Advances in dual-tone development for pitch frequency doubling , 2010, Advanced Lithography.
[3] Hidetami Yaegashi,et al. Recent progress on multipatterning: approach to pattern placement correction , 2015, Advanced Lithography.
[4] Michihiro Shirakawa,et al. Cost effective processes by using negative-tone development application , 2015, Advanced Lithography.
[5] John J. Biafore,et al. Negative tone development: gaining insight through physical simulation , 2011, Advanced Lithography.
[6] Yongan Xu,et al. Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond) , 2011, Advanced Lithography.
[7] Atsushi Sekiguchi. Study of swelling behavior in ArF resist during development by the QCM method (3): observations of swelling layer elastic modulus , 2013, Advanced Lithography.
[8] Naoki Inoue,et al. Advanced patterning approaches based on negative-tone development (NTD) process for further extension of 193nm immersion lithography , 2015, Advanced Lithography.
[9] Carlos Fonseca,et al. Advances and challenges in dual-tone development process optimization , 2009, Advanced Lithography.
[10] Hideaki Tsubaki,et al. Negative-tone imaging with EUV exposure for 14nm hp and beyond , 2015, Advanced Lithography.
[11] Qi Cheng,et al. Technological merits, process complexity, and cost analysis of self-aligned multiple patterning , 2012, Advanced Lithography.
[12] Peng Xie,et al. Novel and cost-effective multiple patterning technology by means of invisible SiOxNy hardmask , 2014, Advanced Lithography.
[13] Tae-Sun Kim,et al. Negative tone imaging (NTI) with KrF: extension of 248nm IIP lithography to under sub-20nm logic device , 2013, Advanced Lithography.
[14] Yoshi Hishiro,et al. Thin bilayer resists for 193-nm and future photolithography II , 2007, SPIE Advanced Lithography.
[15] Hidetami Yaegashi,et al. Recent progress on multiple-patterning process , 2014, Advanced Lithography.
[16] Shinji Tarutani,et al. Functional resist materials for negative tone development in advanced lithography , 2012, Other Conferences.