Semiconductor optical amplifiers: multifunctional possibilities, photoresponse and phase shift properties

Laser amplifiers based on semiconductor diodes are discussed with respect to their multifunctional possibilities including signal and power amplification, switching, phaseshift, photodetection and non-linear properties. The analysis is given of the electrical response (so called 'optoelectronic signal') to a passing optical signal. Experimental data are obtained on photoresponse, inversion threshold and phaseshift measurements in InGaAsP/InP SOA diodes. The optoelectronic response changes sign at an inversion threshold ('transparency current') thus the latter can easily be measured in lasers and amplifiers. This allows electrical diagnostics of the operation mode. An amplifier-photoreceiver may be a suitable device for optoelectronics.

[1]  D. Spirit,et al.  Picosecond pulse response of a travelling-wave semiconductor laser amplifier , 1987 .

[2]  J. Temmyo,et al.  15.1-dB-gain Pr/sup 3+/-doped fluoride fiber amplifier pumped by high-power laser-diode modules , 1992, IEEE Photonics Technology Letters.

[3]  W. Powazinik,et al.  Ultra-low-reflectivity semiconductor optical amplifiers without antireflection coatings , 1990 .

[4]  C. Hilsum,et al.  Measurement of amplification in a GaAs injection laser , 1963 .

[5]  Gregory Raybon,et al.  Distortionless picosecond pulse amplification and gain compression in a traveling‐wave InGaAsP optical amplifier , 1988 .

[6]  G. Bendelli,et al.  A new structure for high-power TW-SLA (Travelling wave semiconductor laser amplifier) , 1991, IEEE Photonics Technology Letters.

[7]  M. Sugimoto,et al.  Efficient backward and forward pumping CW Raman amplification for InGaAsP laser light in silica fibres , 1983 .

[8]  A. Bogatov,et al.  Anomalous interaction of spectral modes in a semiconductor laser , 1975 .

[9]  S. Tsuji,et al.  Four-wave mixing in semiconductor optical amplifier under CW operation and with FSK modulation at 155 Mbit/s , 1991 .

[10]  David G. Mehuys,et al.  12 W broad area semiconductor amplifier with diffraction limited optical output , 1991 .

[11]  P. Eliseev,et al.  Electrical diagnostics of the amplifier operation and a feasibility of signal registration on the basis of the voltage saturation effect in junction laser diodes , 1983 .

[12]  Takaaki Mukai,et al.  Recent progress in semiconductor laser amplifiers , 1988 .

[13]  E. Finkman,et al.  Simple approximation for Fermi energy in nonparabolic semiconductors , 1991 .

[14]  Yasutake Ohishi,et al.  Laser diode pumped Pr/sup 3+/-doped and Pr/sup 3+/-Yb/sup 3+/-codoped fluoride fiber amplifiers operating at 1.3 mu m , 1991 .

[15]  N. Olsson.  Lightwave systems with optical amplifiers , 1989 .

[16]  A. Alping,et al.  Detection at Gbit/s rates with a TJS GaAlAs laser , 1983 .

[17]  R. Ludwig,et al.  Semiconductor laser optical amplifiers in switching and distribution networks , 1989 .

[18]  Anders Karlsson,et al.  Traveling wave semiconductor laser amplifier detectors , 1990 .

[19]  N. A. Olsson,et al.  Characteristics of a semiconductor laser pumped brillouin amplifier with electronically controlled bandwidth , 1987 .

[20]  Interferometric determination of the linewidth enhancement factor of a 1.55 μm GaInAsP optical amplifier , 1991 .

[21]  S. H. Macomber,et al.  Semiconductor Laser Power Amplifier , 1987, Other Conferences.