Improvement of the modified opposition method used for accurate switching energy estimation of WBG transistors

This paper describes an improvement of the Modified Opposition Method used to precisely estimate switching losses of SiC and GaN transistors, in order to accurately design power converters. This method estimates separately turn-off and turn-on energies, by two different operation modes. The aim of this work is to improve accuracy of switching energy estimation by considering meticulously losses on the inductor, board paths and connection resistances. The proposed switching loss measurement method improvement is explained and experimental results on a Silicon Carbide MOSFET verify its operation and accuracy compared to datasheet information.