论文信息 - High-speed Germanium-on-SOI lateral PIN photodiodes

High-speed Germanium-on-SOI lateral PIN photodiodes

We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength of 850 nm, 10 /spl times/10-/spl mu/m detectors with finger spacing S of 0.4 /spl mu/m (0.6 /spl mu/m) produced a -3-dB bandwidth of 29 GHz (27 GHz) at a bias voltage of -1 V. The detectors with S=0.6 /spl mu/m had external quantum efficiency of 34% at 850 nm and 46% at 900 nm and dark current of 0.02 /spl mu/A at -1-V bias.

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