论文信息 - Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode

Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode

We report the first room‐temperature sharp line electroluminescence of an erbium‐doped silicon light‐emitting diode at λ=1.54 μm. The electroluminescence originates from an internal f‐shell transition of Er3+. The wavelength and linewidth are relatively independent of temperature. The light intensity saturates at a drive current density of 5 A/cm2 due to the long excited state lifetime of Er3+. As the temperature increases from 100 K to room temperature, the light intensity decreases significantly.

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