论文信息 - Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy - 字舞流文

Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy

F. Calle | M. Sánchez-García | E. Calleja | E. Muñoz | C. Molloy | D. Somerford | J. Serrano | J. Blanco | F. Sanchez