论文信息 - Radiation characterisation of commercially available 1 Mbit/4 Mbit SRAMs for space applications

Radiation characterisation of commercially available 1 Mbit/4 Mbit SRAMs for space applications

This paper presents the radiation results of a ground test program carried out on seven commercially available 1 Mbit/4 Mbit SRAMs. Heavy ion and proton single event effect (SEE) results together with Co/sup 60/ total ionizing dose performance are presented for these spacecraft candidate types.

R. Harboe-Sorensen | C. Poivey | M. Bruggemann | B. Doucin

[1] Robert Ecoffet,et al. Heavy ion induced single hard errors on submicronic memories (for space application) , 1992 .

[2] R. Harboe-Sorensen,et al. The heavy ion irradiation facility at CYCLONE - a dedicated SEE beam line , 1996, 1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference.

[3] C. Poivey,et al. Characterization of single hard errors (SHE) in 1 M-bit SRAMs from single ion , 1994 .

[4] Aivars J. Lelis,et al. Radiation response of advanced commercial SRAMs , 1996 .

[5] P. Garnier,et al. Total dose failures in advanced electronics from single ions , 1993 .