论文信息 - High-efficiency waveguide InGaAs P-I-N photodiode with bandwidth of greater than 40 GHz

High-efficiency waveguide InGaAs P-I-N photodiode with bandwidth of greater than 40 GHz

The bandwidth-efficiency product of side-illuminated waveguide photodiodes (PD’s) is superior to that of surface-illuminated PDs,1 and the waveguiding of the side-illuminated PD is also structurally convenient for integration.2-4 To further the conceptual progress of these detectors, we have introduced separate-confinement double hetero structures (SCH’s), intentionally taking the structural analogy to lasers. The SCH waveguiding can significantly improve the fiber coupling and internal efficiency. The fabricated device has reached a bandwidth of over 40 GHz, keeping a remarkably high external quantum efficiency of about 44% for 1.55-μm light.

Yoshida Junichi | Hata Susumu | Kazutoshi Kato | A. Kozen

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