Nonvolatile memory device and sensing method the same
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PURPOSE: A nonvolatile memory device and a sensing method thereof are provided to reduce an area of a circuit for controlling a read operation by determining precharge time difference according to the resistance of a cell and sensing multilevel data. CONSTITUTION: A sensing unit(100) compares a reference voltage with a sensing voltage corresponding to data stored in a unit cell and amplifies the sensing voltage. The sensing unit senses data by measuring the difference of time to discharge a sensing voltage according to the resistance of a unit cell in an activation section of a sensing enable signal after a bit line is precharged. A sensing control unit(200) controls the sensing enable signal to be activated at different points. A verification control unit(400) changes the delay time of the sensing control unit according to a verification read signal. [Reference numerals] (210, 220, 230) Delay unit; (300) Read control unit; (400) Verification control unit