Contactless electrical characterization and realization of p-type ZnSe

ZnSe is a potentially useful optoelectronic material for applications requiring emission in the blue region of the spectrum. However, such applications necessitate the development of p‐type material, for which reliable ohmic‐contact technology does not exist. To avoid difficulties associated with contact formation while developing p‐type material, we combine two contactless methods, reflectance‐difference spectroscopy and inductive‐coupled radio‐frequency loss to determine carrier type and sheet resistance, respectively. Using this information we have prepared conducting p‐type ZnSe by doping the material during growth with Li.

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