Molecular glass resists for scanning probe lithography

The presented work deals with molecular glass resist materials based on (i) calix[4]resorcinarene resist systems, (ii) twisted fully aromatic biscarbazole-biphenyl materials, and (iii) fully aromatic spiro resist materials as new promising materials for Scanning Probe Lithography (SPL). Because of the non-chemically amplified resist nature and the absence of corresponding material diffusion, the novel SPL resists have the potential to increase the patterning resolution capabilities at a simultaneous reduction of the edge roughness (LER). In addition, these low molecular weight molecular glasses offer the advantage of solvent-free film preparation by physical vapor deposition (PVD). The PVD prepared films offer a number of advantages compared to spin coated ones such as no more pinholes, defects, or residual solvent domains, which can locally affect the film properties. These high-quality PVD films are ideal candidates for the direct patterning by SPL tools. Presented highlights are the thermal scanning probe lithography (tSPL) investigations at IBM Research - Zurich and the patterning by using electric field, current controlled scanning probe lithography (EF-CC-SPL) at the Technical University of Ilmenau. Further investigations on film forming behavior, etch resistance, and etch transfer are presented. Owing to the high-resolution probe based patterning capability in combination with their improved etch selectivity compared to reference polymeric resists the presented molecular glass resists are highly promising candidates for lithography at the single nanometer digit level.

[1]  Marcus Kaestner,et al.  Nanolithography by scanning probes on calixarene molecular glass resist using mix-and-match lithography , 2013 .

[2]  Ivo W. Rangelow,et al.  Scanning proximal probe lithography for sub-10 nm resolution on calix[4]resorcinarene , 2011 .

[3]  Peter Strohriegl,et al.  A series of CBP-derivatives as host materials for blue phosphorescent organic light-emitting diodes , 2011 .

[4]  Osamu Haba,et al.  Three-Component Negative-Type Photoresist Based on Calix[4]resorcinarene, a Cross-linker, and a Photoacid Generator , 1998 .

[5]  M. Ueda,et al.  Synthesis of Calixresorcinarene Derivatives with Cross-linking units and Evaluation of Lithographic Performance , 2011 .

[6]  Tadatomi Nishikubo,et al.  Recent Development in Molecular Resists for Extreme Ultraviolet Lithography , 2011 .

[7]  V. A. Azarko,et al.  Synthesis, film-forming, and light-sensitivity properties of allyl and propargyl maleopimarates and cytraconopimarates , 2010 .

[8]  Kenji Gamo,et al.  Novel Electron-Beam Molecular Resists with High Resolution and High Sensitivity for Nanometer Lithography , 2004 .

[9]  Peter Strohriegl,et al.  Meta-linked CBP-derivatives as host materials for a blue iridium carbene complex , 2011 .

[10]  E. A. Dikusar,et al.  Synthesis, film-forming properties, and thermal and light sensitivity of N,N′-bis[4-hydroxy(alkoxy, acyloxy)-3-alkoxyphenylmethylidene]benzene-1,4-diamines , 2008 .

[11]  E. A. Dikusar,et al.  Synthesis, film-forming properties, and photosensitivity of 4-alkoxy(acyloxy)-3-alkoxyphenylmethylene-(biphenyl-4-yl)amines , 2007 .

[12]  Holger Sailer,et al.  Studies on sensitivity and etching resistance of calix[4]arene derivatives as negative tone electron beam resists , 2003 .

[13]  Kenji Gamo,et al.  Novel class of low molecular‐weight organic resists for nanometer lithography , 1996 .

[14]  Hans-Werner Schmidt,et al.  Combinatorial preparation and characterization of thin-film multilayer electro-optical devices. , 2007, The Review of scientific instruments.

[15]  Ivo W. Rangelow,et al.  Scanning probe nanolithography on calixarene , 2012 .

[16]  E. A. Dikusar,et al.  Synthesis and study of film-forming properties and light sensitivity of 4-acyloxy-3-methoxy(ethoxy)phenylmethylidene-(chrysen-2-yl)amines , 2007 .

[17]  V. E. Agabekov,et al.  Photochemical transformations of sulfophthaleine dyes in thin film state , 1994 .

[18]  K. A. Valiev,et al.  Investigation of new dry high sensitive resist using 100 kV electron lithography , 1994 .

[19]  Jin Baek Kim,et al.  A positive-working alkaline developable photoresist based on partially tert-Boc-protected calix[4]resorcinarene and a photoacid generator , 2002 .

[20]  Daiju Shiono,et al.  Fundamental Decomposition Analysis of Chemically Amplified Molecular Resist for below 22 nm Resolution , 2010 .

[21]  Y. Shirota.  Organic materials for electronic and optoelectronic devices , 2000 .

[22]  A. Knoll,et al.  Nanoscale Three-Dimensional Patterning of Molecular Resists by Scanning Probes , 2010, Science.

[23]  Yoshikazu Takahashi,et al.  FABRICATION OF POLYUREA RESISTS BY VAPOR DEPOSITION POLYMERIZATION FOR ALL DRY PROCESS , 1995 .

[24]  V. P. Korchkov,et al.  All-dry vacuum submicron lithography , 1983 .

[25]  Shinji Matsui,et al.  Nanometer‐scale resolution of calixarene negative resist in electron beam lithography , 1996 .

[26]  Christopher K. Ober,et al.  Hydroxyphenylbenzene derivatives as glass forming molecules for high resolution photoresists , 2008 .

[27]  Hans-Werner Schmidt,et al.  Towards environmentally friendly, dry deposited, water developable molecular glass photoresists. , 2008, Physical chemistry chemical physics : PCCP.

[28]  S. Raible,et al.  Systematic studies of functionalized calixarenes as negative tone electron beam resist , 1998 .