VCSEL arrays for CMOS integrated optical interconnect systems

We report on the fabrication of two-dimensional vertical- cavity surface-emitting laser (VCSEL) arrays designed for flip-chip integration with silicon complementary metal-oxide semiconductor (CMOS) circuits. Devices emitting at 980 nm wavelength show single-mode output powers of 3 mW, modulation current efficiencies up to 10 GHz/(root)mA, and are suitable for digital data transmission at 12.5 Gb/s. The chips are incorporated into optical area interconnect system demonstrators employing plastic optical fiber bundles as waveguiding medium. Substrate removal is applied as a possible route toward the production of modules compatible to the standard 850 nm wavelength regime. Fully pretested and mechanically robust arrays for short-wavelength bottom emission are alternatively demonstrated by providing light outcoupling holes in the GaAs substrate.

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