The segmented SCRs with optimized holding voltage for on-chip ESD protection
暂无分享,去创建一个
Chenyue Ma | Xinnan Lin | Jizhi Liu | Zhiwei Liu | Wengang Huang | Fan Liu | Xiaozong Huang | Wenqiang Song
[1] Sirui Luo,et al. ESD Protection Device With Dual-Polarity Conduction and High Blocking Voltage Realized in CMOS Process , 2014, IEEE Electron Device Letters.
[2] Zhiwei Liu,et al. Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) Applications , 2008, IEEE Electron Device Letters.
[3] Jin He,et al. Segmented SCR for high voltage ESD protection , 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.
[4] Hui Cheng,et al. A New High Holding Voltage Dual-Direction SCR With Optimized Segmented Topology , 2016, IEEE Electron Device Letters.
[5] Ming-Dou Ker,et al. A Latchup-Immune and Robust SCR Device for ESD Protection in 0.25-μm 5-V CMOS Process , 2013, IEEE Electron Device Letters.
[6] Ming-Dou Ker,et al. SCR device with dynamic holding voltage for on-chip ESD protection in a 0.25-/spl mu/m fully salicided CMOS process , 2004 .
[8] Ming-Dou Ker,et al. Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits , 2005, IEEE Transactions on Device and Materials Reliability.