Performance Analysis of Rear Point Contact Solar Cells by Three-Dimensional Numerical Simulation

The adoption of local point contacts at the back surface of high-efficiency monocrystalline silicon solar cells is strategic in order to reduce the recombination losses at the rear side of the device. However, the reduction of the rear-contact surface leads to an increase of series resistance losses. In this paper, we present an extensive analysis based on 3-D optoelectronic numerical device simulations in order to highlight the dependence of the conversion efficiency on the main geometrical and technological parameters of the cell, such as the pitch and the size of the rear point contacts and the substrate resistivity. A state-of-the-art device simulator has been successfully adopted in order to accurately solve the transport equations in the semiconductor by taking into account all the loss mechanisms that are crucial in order to address the design of the cell.

[1]  R. Brendel,et al.  Towards 20% efficient large‐area screen‐printed rear‐passivated silicon solar cells , 2012 .

[2]  Stefan W. Glunz,et al.  Investigation of laser‐fired rear‐side recombination properties using an analytical model , 2006 .

[3]  Andreas Wolf,et al.  Comprehensive analytical model for locally contacted rear surface passivated solar cells , 2010 .

[4]  D. Tonini,et al.  Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations , 2011, 2011 37th IEEE Photovoltaic Specialists Conference.

[5]  M. Green Silicon solar cells : advanced principles and practice , 1995 .

[6]  Rudolf Hezel,et al.  Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells , 2002 .

[7]  Wilhelm Warta,et al.  Minority carrier lifetime degradation in boron-doped Czochralski silicon , 2001 .

[8]  J. Werner,et al.  20·5% efficient silicon solar cell with a low temperature rear side process using laser‐fired contacts , 2006 .

[9]  D.B.M. Klaassen,et al.  A unified mobility model for device simulation—I. Model equations and concentration dependence , 1992 .

[10]  W. Warta,et al.  Solar cell efficiency tables (version 33) , 2009 .

[11]  M. Tucci,et al.  Laser fired back contact for silicon solar cells , 2008 .

[12]  D. Tonini,et al.  2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance , 2011, 2011 37th IEEE Photovoltaic Specialists Conference.

[13]  M. Green,et al.  24% efficient perl silicon solar cell: Recent improvements in high efficiency silicon cell research , 1996 .

[14]  W. Warta,et al.  Analysis of one-sun monocrystalline rear-contacted silicon solar cells with efficiencies of 22.1% , 2002 .

[15]  A. Cuevas,et al.  Passivation of crystalline silicon using silicon nitride , 2003, 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of.

[16]  R. Brendel,et al.  Analytical model for the optimization of locally contacted solar cells , 2005, Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005..

[17]  Screen-Printed Back Surface Reflector for Light Trapping in Crystalline Silicon Solar Cells , 2001 .

[18]  R. H. Cox,et al.  Ohmic contacts for GaAs devices , 1967 .

[19]  Armin G. Aberle,et al.  Crystalline silicon solar cells : advanced surface passivation and analysis , 1999 .

[20]  21.1 % efficient perc silicon solar cells on large scale by using inline sputtering for metallization , 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

[21]  M. Green,et al.  Two‐dimensional numerical optimization study of the rear contact geometry of high‐efficiency silicon solar cells , 1994 .

[22]  C. Fiegna,et al.  Open issues for the numerical simulation of silicon solar cells , 2011, Ulis 2011 Ultimate Integration on Silicon.

[23]  Andreas Wolf,et al.  Pilot line processing of 18.6% efficient rear surface passivated large area solar cells , 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

[24]  A. Rohatgi,et al.  3D-modeling of a back point contact solar cell structure with a selective emitter , 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).

[25]  C. Voz,et al.  Laser‐fired contact optimization in c‐Si solar cells , 2012 .

[26]  C. Voz,et al.  Crystalline silicon solar cells beyond 20% efficiency , 2011, Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011.

[27]  Andreas Schenk,et al.  Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation , 1998 .

[28]  K. Misiakos,et al.  Three-dimensional simulation of carrier transport effects in the base of rear point contact silicon solar cells , 2001 .

[29]  Andreas Wolf,et al.  Advanced analytical model for the effective recombination velocity of locally contacted surfaces , 2010 .

[30]  P. Altermatt,et al.  Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing , 2003 .

[31]  A. Rohatgi,et al.  Large area 19.4% efficient rear passivated silicon solar cells with local Al BSF and screen-printed contacts , 2011, 2011 37th IEEE Photovoltaic Specialists Conference.

[32]  J. Fossum,et al.  Carrier recombination and lifetime in highly doped silicon , 1983 .

[33]  A. Cuevas,et al.  Comparison of the Open Circuit Voltage of Simplified PERC Cells Passivated with PECVD Silicon Nitride and Thermal Silicon Oxide , 2000 .

[34]  Martin A. Green,et al.  Silicon solar cells , 1996 .

[35]  D. Klaassen A unified mobility model for device simulation , 1990, International Technical Digest on Electron Devices.

[36]  Andrew Blakers,et al.  High Efficiency Crystalline Silicon Solar Cells , 1990 .