Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs

Abstract In this paper, hot-carrier injection (HCI) stress has been used to investigate the reliability of n-channel FinFET devices with different fin numbers. Threshold voltage (V TH ) shift, subthreshold swing and transconductance variation were extracted to evaluate the degradation of the device under stress. FinFET devices with fewer fins show more serious performance degradation due to hot-carrier injection stress. It is suggested that the existing of coupling effect between neighboring fins reduces the inversion charge density and equivalent electric field in multi-fin devices, which causes better reliability than single-fin devices.

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