Atomic Beam Modifications of Insulator Surfaces

A deposition chamber is described comprising a unique broad-beam, high-flux (>2 mA/cm2), low-energy (<100 eV) molecular and atomic nitrogen source suitable for growth and/or surface modification of ceramic thin films. Atom flux is generated by collisionally neutralizing and dissociating a diatomic nitrogen ion beam impinging a specially shaped surface interposed between the ion source and the substrate to be modified. The dissociation surface functions as a „funnel” to give the resulting neutral beam a tight geometric focus. In addition, our chamber possesses the unique capability of surface analysis at high pressures (mTorr) during thin-film formation through the use of pulsed time-of-flight ion scattering techniques. This allows continuous monitoring (and control) of film stoichiometry during growth.

[1]  Y. Lifshitz,et al.  Auger and x‐ray electron spectroscopy studies of hBN, cBN, and N+2 ion irradiation of boron and boron nitride , 1990 .

[2]  Y. Hirai,et al.  Formation of cubic boron nitride films by arc‐like plasma‐enhanced ion plating method , 1990 .

[3]  M. Okamoto,et al.  Formation of Cubic Boron Nitride Films on Diamond by Plasma CVD Technique , 1990 .

[4]  H. Yokoyama,et al.  Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers , 1990 .

[5]  P. T. Murray,et al.  Deposition of stoichiometric MoS2 thin films by pulsed laser evaporation , 1989 .

[6]  H. Schmidt,et al.  Rapid and sensitive determination of hydrogen isotopes at a surface by Li+ direct recoil spectroscopy , 1988 .

[7]  R. Bunshah,et al.  Plasma assisted deposition techniques and synthesis of novel materials , 1988 .

[8]  K. Ogata,et al.  On the formation of BN films by ion beam and vapor deposition , 1988 .

[9]  守 佐藤.  イオン照射と蒸着(IVD)による立方晶系窒化ボロン膜 , 1987 .

[10]  H. Saitoh,et al.  Synthesis of cubic boron nitride film by an RF plasma CVD method. , 1987 .

[11]  M. Minakata,et al.  Study of boron nitride gate insulators onto InP grown by low‐temperature chemical vapor deposition , 1984 .

[12]  W. Heiland,et al.  Time-of-flight measurements of light molecular ions scattered at grazing incidence from a Ni(111) surface , 1984 .

[13]  S. Luitjens,et al.  The measurement of energy spectra of neutral particles in low energy ion scattering , 1980 .

[14]  A. C. Adams,et al.  The Chemical Deposition of Boron‐Nitrogen Films , 1980 .

[15]  S. Murarka,et al.  Effect of Growth Parameters on the CVD of Boron Nitride and Phosphorus‐Doped Boron Nitride , 1979 .

[16]  G. L. Miller,et al.  Energy and mass spectra of neutral and charged particles scattered and desorbed from gold surfaces , 1977 .

[17]  W. Poschenrieder.  Multiple-focusing time-of-flight mass spectrometers Part II. TOFMS with equal energy acceleration , 1971 .

[18]  M. Rand,et al.  Preparation and Properties of Thin Film Boron Nitride , 1968 .