PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation

This paper describes the latest and most advanced surface-potential-based model jointly developed by The Pennsylvania State University and Philips. Specific topics include model structure, mobility and velocity saturation description, further development and verification of symmetric linearization method, recent advances in the computational techniques for the surface potential, modeling of gate tunneling current, inclusion of the retrograde impurity profile, and noise sources. The emphasis of this paper is on incorporating the recent advances in MOS device physics and modeling within the compact modeling context

[1]  C. Sah,et al.  Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors☆ , 1966 .

[2]  N. Arora,et al.  A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation , 1987, IEEE Transactions on Electron Devices.

[3]  Ping-Keung Ko,et al.  A physics-based MOSFET noise model for circuit simulators , 1990 .

[4]  D.B.M. Klaassen,et al.  A large signal non-quasi-static MOS model for RF circuit simulation , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[5]  P. Ratnam,et al.  A new approach to the modeling of nonuniformly doped short-channel MOSFET's , 1984, IEEE Transactions on Electron Devices.

[6]  A.J. Scholten,et al.  Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices , 2005, IEEE Transactions on Electron Devices.

[7]  Zhiping Yu,et al.  Impact of gate direct tunneling current on circuit performance: a simulation study , 2001 .

[8]  R. van Langevelde,et al.  Physical Background of MOS Model 11 , 2003 .

[9]  K. Saraswat,et al.  Thickness limitations of SiO/sub 2/ gate dielectrics for MOS ULSI , 1990 .

[10]  Mansun Chan,et al.  A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation , 1997 .

[11]  R.P. Jindal.  Effect of induced gate noise at zero drain bias in field-effect transistors , 2005, IEEE Transactions on Electron Devices.

[12]  D.B.M. Klaassen,et al.  New compact model for induced gate current noise [MOSFET] , 2003, IEEE International Electron Devices Meeting 2003.

[13]  K. Mistry,et al.  A general partition scheme for gate leakage current suitable for MOSFET compact models , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[14]  E. Vittoz,et al.  An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications , 1995 .

[15]  Chenming Hu,et al.  Modeling of pocket implanted MOSFETs for anomalous analog behavior , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[16]  C. C. McAndrew.  Useful numerical techniques for compact modeling , 2002, Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002..

[17]  J. Brews.  A charge-sheet model of the MOSFET , 1978 .

[18]  G Gildenblat,et al.  Substrate Current in Surface-Potential-Based Compact MOSFET Models , 2003 .

[19]  R. van Langevelde,et al.  New Compact Model for Induced Gate Current Noise , 2003 .

[20]  C. Hu,et al.  A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .

[21]  Xin Li,et al.  Unified non-quasi-static MOSFET model for large-signal and small-signal simulations , 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..

[22]  D.B.M. Klaassen,et al.  RF-distortion in deep-submicron CMOS technologies , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

[23]  David L. Harame,et al.  Modeling and Characterization , 2004 .

[24]  W. Grabinski,et al.  RF distortion analysis with compact MOSFET models , 2004, Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571).

[25]  C. C. McAndrew,et al.  Accuracy of approximations in MOSFET charge models , 2002 .

[26]  T. Chan,et al.  Subbreakdown drain leakage current in MOSFET , 1987, IEEE Electron Device Letters.

[27]  R. Havens,et al.  Noise modeling for RF CMOS circuit simulation , 2003 .

[28]  Carver A. Mead,et al.  A Physical Charge-Controlled Model for MOS Transistors , 1987 .

[29]  Xin Li,et al.  SP-SOI: a third generation surface potential based compact SOI MOSFET Model , 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..

[30]  G.D.J. Smit,et al.  A new compact model for junctions in advanced CMOS technologies , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[31]  C. McAndrew,et al.  A physically based, scalable MOS varactor model and extraction methodology for RF applications , 2005, IEEE Transactions on Electron Devices.

[32]  A. J. Scholten,et al.  Recent Enhancements of MOS Model 11 , 2004 .

[33]  Matthias Bucher,et al.  Modelling and Characterization of Non-Uniform Substrate Doping , 1997 .

[34]  M. Shur,et al.  Unified charge control model and subthreshold current in heterostructure field-effect transistors , 1990, IEEE Electron Device Letters.

[35]  N. D. Arora,et al.  Characterization and modeling of the n- and p-channel MOSFETs inversion-layer mobility in the range 25–125°C , 1994 .

[36]  J. R. Brews,et al.  Comparison of deep-submicrometer conventional and retrograde n-MOSFETs , 2000 .

[37]  Colin C. McAndrew,et al.  Correlated Noise Modeling and Simulation , 2005 .

[38]  Daniel P. Foty,et al.  MOSFET Modeling With SPICE: Principles and Practice , 1996 .

[39]  G. Gildenblat,et al.  A Unified Nonquasi-Static MOSFET Model for Large-Signal and Small-Signal Simulations , 2006, IEEE Transactions on Electron Devices.

[40]  C.C. McAndrew,et al.  Validation of MOSFET model Source–Drain Symmetry , 2006, IEEE Transactions on Electron Devices.

[41]  L. Esaki,et al.  Tunneling in a finite superlattice , 1973 .

[42]  C. Hu,et al.  Advanced Compact Models for MOSFETs , 2005 .

[43]  B. Hoefflinger,et al.  A parametric short-channel MOS transistor model for subthreshold and strong inversion current , 1984, IEEE Journal of Solid-State Circuits.

[44]  R.W. Dutton,et al.  A charge-oriented model for MOS transistor capacitances , 1978, IEEE Journal of Solid-State Circuits.

[45]  D.B.M. Klaassen,et al.  Compact CMOS Modelling for Advanced Analogue and RF Applications , 2004 .

[46]  Gennady Gildenblat,et al.  SP: an advanced surface-potential-based compact MOSFET model , 2003, IEEE Journal of Solid-State Circuits.

[47]  G. Gildenblat,et al.  Reemergence of the surface-potential-based compact MOSFET models , 2003, IEEE International Electron Devices Meeting 2003.

[48]  A. van der Ziel,et al.  Noise in Solid State Devices , 1978 .

[49]  G.D.J. Smit,et al.  The Physical Background of JUNCAP2 , 2006, IEEE Transactions on Electron Devices.

[50]  D.B.M. Klaassen,et al.  Gate current: Modeling, /spl Delta/L extraction and impact on RF performance , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[51]  J. V. Faricelli,et al.  A physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications , 1995, Proceedings of International Electron Devices Meeting.

[52]  G. Gildenblat,et al.  Analytical approximation for perturbation of MOSFET surface potential by polysilicon depletion layer , 1999 .

[53]  Chenming Hu,et al.  Hot-electron-induced MOSFET degradation—Model, monitor, and improvement , 1985, IEEE Transactions on Electron Devices.

[54]  S. Mudanai,et al.  An efficient surface potential solution algorithm for compact MOSFET models , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[55]  Carlos Galup-Montoro,et al.  An explicit physical model for the long-channel MOS transistor including small-signal parameters , 1995 .

[56]  Y. Tsividis.  Operation and modeling of the MOS transistor , 1987 .

[57]  Chenming Hu,et al.  Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement , 1985, IEEE Journal of Solid-State Circuits.

[58]  H.J. Mattausch,et al.  HiSIM: a MOSFET model for circuit simulation connecting circuit performance with technology , 2002, Digest. International Electron Devices Meeting,.

[59]  Sah C-T,et al.  A History of MOS Transistor Compact Modeling , 2005 .

[60]  C. C. McAndrew,et al.  An improved MOSFET model for circuit simulation , 1998 .

[61]  G. Gildenblat,et al.  Symmetric bulk charge linearisation in charge-sheet MOSFET model , 2001 .

[62]  F. M. Klaassen,et al.  Thermal noise of MOS transistors , 1967 .

[63]  J.E. Leiss,et al.  A dynamic average model for the body effect in ion implanted short channel (L = 1µm) MOSFET's , 1981, IEEE Transactions on Electron Devices.

[64]  William Liu,et al.  MOSFET Models for SPICE Simulation: Including BSIM3v3 and BSIM4 , 2001 .

[65]  G. Gildenblat,et al.  Quasi-static and nonquasi-static compact MOSFET models based on symmetric linearization of the bulk and inversion charges , 2003 .

[66]  E. Kane.  Zener tunneling in semiconductors , 1960 .

[67]  N. D. Arora,et al.  MOSFET Models for VLSI Circuit Simulation: Theory and Practice , 1993 .

[68]  G. Iannaccone,et al.  Physics-based compact model of nanoscale MOSFETs-Part II: effects of degeneracy on transport , 2005, IEEE Transactions on Electron Devices.

[69]  Hong June Park,et al.  A charge sheet capacitance model of short channel MOSFETs for SPICE , 1991, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[70]  R.M.D.A. Velghe,et al.  Modeling and characterization of noise in 90‐nm RF CMOS technology , 2005 .

[71]  N. D. Arora,et al.  Semi-empirical model for the threshold voltage of a double implanted MOSFET and its temperature dependence , 1987 .

[72]  Weimin Wu,et al.  Physics-based mathematical conditioning of the MOSFET surface potential equation , 2004, IEEE Transactions on Electron Devices.

[73]  G. Gildenblat,et al.  A surface potential-based compact model of n-MOSFET gate-tunneling current , 2004, IEEE Transactions on Electron Devices.

[74]  B. F. Oscillator.  Large-Signal Analysis of a Silicon Read Diode Oscillator , 1969 .

[75]  J. T. Clemens,et al.  Characterization of the electron mobility in the inverted <100> Si surface , 1979, 1979 International Electron Devices Meeting.

[76]  K. Suyama,et al.  MOSFET modeling for analog circuit CAD: Problems and prospects , 1993, Proceedings of IEEE Custom Integrated Circuits Conference - CICC '93.

[77]  G. Gildenblat,et al.  Introduction to PSP MOSFET Model , 2005 .

[78]  Shunsuke Miyamoto,et al.  MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime , 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..

[79]  Y.A. El-Mansy,et al.  A simple two-dimensional model for IGFET operation in the saturation region , 1977, IEEE Transactions on Electron Devices.