Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

An analysis of fast and slow traps at the interface of 4H–SiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation.

[1]  Andre Stesmans,et al.  Interfacial Defects in Si O 2 Revealed by Photon Stimulated Tunneling of Electrons , 1997 .

[2]  Effects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal–oxide–semiconductor system , 2000 .

[3]  Mario G. Ancona,et al.  Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices , 2002 .

[4]  V. Afanas’ev,et al.  Intrinsic SiC/SiO2 Interface States , 1997 .

[5]  Sima Dimitrijev,et al.  Physical Properties of N2O and NO-nitrided gate oxides grown on 4H-SiC , 2001 .

[6]  Sima Dimitrijev,et al.  Passivation of the Oxide/4H-SiC Interface , 2002 .

[7]  Einar Ö. Sveinbjörnsson,et al.  On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures , 2002 .

[8]  Andre Stesmans,et al.  Hole traps in oxide layers thermally grown on SiC , 1996 .

[9]  John W. Palmour,et al.  High-Current, NO-Annealed Lateral 4H-SiC MOSFETs , 2002 .

[10]  Andre Stesmans,et al.  H-complexed oxygen vacancy in SiO2: Energy level of a negatively charged state , 1997 .

[11]  L. Feldman,et al.  Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide , 2000 .

[12]  Peter Friedrichs,et al.  Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation , 2002 .

[13]  Andre Stesmans,et al.  Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning , 1996 .

[14]  S. Dimitrijev,et al.  Effects of nitridation in gate oxides grown on 4H-SiC , 2001 .

[15]  H. B. Harrison,et al.  Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors , 1999 .

[16]  Leonard C. Feldman,et al.  Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide , 2002 .

[17]  H. B. Harrison,et al.  INTERFACIAL CHARACTERISTICS OF N2O AND NO NITRIDED SIO2 GROWN ON SIC BY RAPID THERMAL PROCESSING , 1997 .

[18]  Max J. Schulz,et al.  Band offsets and electronic structure of SiC/SiO2 interfaces , 1996 .

[19]  Andre Stesmans,et al.  Shallow electron traps at the 4H–SiC/SiO2 interface , 2000 .