论文信息 - AlGaInAs/InP 1.5 mu m MQW DFB laser diodes exceeding 20 GHz bandwidth

AlGaInAs/InP 1.5 mu m MQW DFB laser diodes exceeding 20 GHz bandwidth

Buried mushroom multiquantum well DFB laser diodes with compressively strained GaInAs quantum wells and asymmetric confinement layer design are fabricated with a combined MBE/MOCVD technology. Packaged devices exhibit high –3 dB IM bandwidths for very low bias levels and a record bandwidth for this material system of 21 GHz.

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