Extended wavelength avalanche photodiodes

The ability to detect optical signals beyond 1.65µm is of technological interest for a number of applications. In this work we describe a novel technology that offers considerable promise for high speed, high sensitivity detection in this region utilising avalanche gain. InGaAs/GaAsSb type II superlattices as the absorption region and InAlAs as the multiplication region can be combined to form a separate absorption and multiplication (SAM) avalanche photodiode (APD), all grown lattice matched on InP substrates. Detection at room temperature to beyond 2.4 µm can be readily achieved as can gains in excess of 40.

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