论文信息 - Electronic properties of TiO2-based materials characterized by high Ti3+ self-doping and low recombination rate of electron–hole pairs - 字舞流文

Electronic properties of TiO2-based materials characterized by high Ti3+ self-doping and low recombination rate of electron–hole pairs

G. D’Errico | F. Sannino | D. Pirozzi | P. Pernice | A. Aronne | A. Rossi | L. Stefano | B. Elsener | M. Fantauzzi | D. Atzei | I. Rea | C. Imparato